may 2012 fdb039n06 n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation fdb039n06 rev. c0 www.fairchildsemi.com 1 fdb039n06 n-channel powertrench ? mosfet 60v, 174a, 3.9m features ?r ds(on) = 2.95m ( typ.) @ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc convertors / synchronous rectification d g s g s d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 60 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c, silicion limited) 174* a -continuous (t c = 100 o c, silicion limited) 123* -continuous (t c = 25 o c, package limited) 120 i dm drain current - pulsed (note 1) 696 a e as single pulsed avalanche energy (note 2) 872 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d power dissipation (t c = 25 o c) 231 w - derate above 25 o c1.54w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.65 o c/w r ja thermal resistance, junction to ambient (minimum pad of 2 oz copper) 62.5 thermal resistance, junction to ambient (1 in 2 pad of 2 oz copper) 40 * calculated continuous current based on maximum allowable ju nction temperature. package limitation current is 120a.
fdb039n06 n-channel powertrench ? mosfet fdb039n06 rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdb039n06 fdb039n06 to-263 tube - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c60 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.04 - v/ o c i dss zero gate voltage drain current v ds = 60v, v gs = 0v - - 1 a v ds = 60v, v gs = 0v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.53.54.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 2.95 3.9 m g fs forward transconductance v ds = 10v, i d = 75a - 169 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 6190 8235 pf c oss output capacitance - 900 1195 pf c rss reverse transfer capacitance - 385 580 pf q g(tot) total gate charge at 10v v ds = 48v, i d = 75a v gs = 10v (note 4) - 102 133 nc q gs gate to source gate charge - 32 - nc q gd gate to drain ?miller? charge - 32 - nc t d(on) turn-on delay time v dd = 30v, i d = 75a v gs = 10v, r gen = 4.7 (note 4) -3070ns t r turn-on rise time - 40 90 ns t d(off) turn-off delay time - 55 120 ns t f turn-off fall time - 24 58 ns i s maximum continuous drain to source diode forward current - - 174 a i sm maximum pulsed drain to source diode forward current - - 696 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ s -41-ns q rr reverse recovery charge - 47 - nc notes: 1: repetitive rating: pulse width limit ed by maximum junction temperature 2: l = 0.31mh, i as = 75a, v dd = 50v, r g = 25 , starting t j = 25c 3: i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: essentially independent of operating temperature typical characteristics
fdb039n06 n-channel powertrench ? mosfet fdb039n06 rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2345678 1 10 100 1000 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0.01 0.1 1 0.1 1 10 100 1000 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0v 10.0v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 6 0.20.40.60.81.01.2 1 10 100 1000 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 60 120 180 240 300 360 2.4 2.8 3.2 3.6 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 20406080100120 0 2 4 6 8 10 *note: i d = 75a v ds = 12v v ds = 30v v ds = 48v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdb039n06 n-channel powertrench ? mosfet fdb039n06 rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -75 -25 25 75 125 175 225 0.4 0.8 1.2 1.6 2.0 2.4 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 40 80 120 160 200 limited by package i d , drain current [a] t c , case temperature [ o c ] 0.1 1 10 100 0.1 1 10 100 1000 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 175 o c r jc = 0.65 o c/w 1 s 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.65 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fdb039n06 n-channel powertrench ? mosfet fdb039n06 rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdb039n06 n-channel powertrench ? mosfet fdb039n06 rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdb039n06 n-channel powertrench ? mosfet fdb039n06 rev. c0 www.fairchildsemi.com 7 mechanical dimensions d 2 pak d 2 pak dimensions in millimeters
fdb039n06 n-channel powertrench ? mosfet fdb039n06 rev. c0 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system genera l corporation, used under licens e by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairch ild does not assume any liability arising out of the application or use of any product or circuit described herein; neit her does it convey any license under its pat ent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any comp onent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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